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| PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MJW16212 PH: (561)283-4500 FAX: (561)286-8914 Website: http://www.semi -tech-inc.com CASE OUTLINE: TO-247 NPN SILICON HIGH VOLTAGE POWER TRANSISTOR ABSOLUTE MAXIMUM RATING: Collector to Base Voltage BVCBO Vdc Collector to Emitter Voltage Emitter to Base Collector to Emitter Continuous Collector Current Peak Collector Current Power Dissipation TA = 25 C Power Dissipation TC = 25 C Storage Temperature Operating Temperature Lead Temperature From Case ELECTRICAL CHARACTERISTICS TA @ 25 C PARAMETERS SYMBOL TEST CONDITIONS Collector to Base Voltage BVCBO Emitter to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Collector to Emitter Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current D.C. Current Gain Pulsed* D.C. Current Gain Pulsed* D.C. Current Gain Pulsed* D.C. Current Gain Pulsed* D.C. Current Gain Pulsed* Saturation Voltage* Saturation Voltage* Saturation Voltage* Base Emitter Voltage* Base Emitter Voltage* Base Emitter Voltage* Base Emitter Voltage* BVEBO BVCEO(sus) BVCEO BVCEV ICBO ICBO ICES ICES ICEV I EBO h FE h FE hFE h FE h FE VCE(sat) VCE(sat) VCE(sat) VBE(sat) VBE(sat) VBE(sat) IC = 5.5A IB = 2.2A IC = 3.0A IB = 400mA IC = 5.5A IB = 2.2A VCE = 1500V VBE = 0 VCE = 1200V VBE = 0 VEB = 8.0V IC = 1.0A VCE = 5.0V IC = 10A VCE = 5.0V IE = 1.0mA IC = 10mA IB = 0 BVCEV BVEBO BVCEO(sus) IC ICM PD PD Tstg TJ TL 1500 8.0 650 10 15 150 -55 to +125 -55 to +125 275 Vdc Vdc Vdc Adc Adc Watts Watts C C C MIN TYP MAX UNIT Vdc Vdc Vdc Vdc Vdc mA mA 8.0 650 250 25 25 4.0 24 6.0 10 A A mA A - 1.0 1.0 1.5 Vdc Vdc Vdc Vdc Vdc Vdc Vdc VBE(on) Notes: *Pulse Width 300usec 2% Duty Cycle Page 1 of 2 PT-1 02/19/01 TYPE: MJW16212 SMALL SIGNAL CHARACTERISTICS Current Gain at F = Input Capacitance Output Capacitance VCE = 10V IE = 0 ftest = 100KHz Transition Frequency IC = 0.5A VCE = 10V ftest = 1.0MHz Input Impedance Voltage Feedback Ratio Output Admittance Noise Figure SWITCHING CHARACTERISTICS Resistive Load Turn-On Time Turn-Off Time Delay Time Rise Time Storage Time Fall Time Inductive Load Storage Time Crossover Time Fall Time Storage Time Crossover Time Fall Time FUNCTIONAL TEST Common-Emitter Amplifier Power Gain Power Output Collector Efficiency Power Output Second Breakdown Collector Current Thermal-Resistance, Junction to Case SYMBOL GPE Pout Pout IS/B RJC MIN TYP MAX UNITS dB Watt % Watt A SYMBOL ton toff td tr ts tf SYMBOL tsv tc tfi tsv tc tfi MIN TYP MAX MIN TYP MAX UNITS s s s s s s UNITS ns s ns s s s NF SYMBOL h fe Cib Cob fT MIN TYP MAX UNITS pf 350 2.75 pf MHz Ohms X10-4 mhos dB 4000 500 IC = 5.5A IB = 2.2A 0.67 C/W Page 2 of 2 PT-1 02/19/01 |
Price & Availability of MJW16212
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